UK optoelectronics device manufacturer and laser diode specialist, Photonic Products, is pleased to introduce Sony's new, high power, 808nm wavelength array laser diodes, the SLD 43 series; designed for high power solid state laser excitation or material processing applications such as laser welding and cutting. The SLD433S4 laser diode has a high efficiency water cooling package enabling it to attain optical power output of 60W.
These Sony laser diodes are GaAlAs (SLD431S, SLD432S) or AlGaAs (SLD433S4) quantum well structure array with an open package, enabling them to achieve high optical power outputs from 20W to 60W.
The SLD433S4 60W 808nm wavelength array laser diode has an operating lifetime of MTTF 10,000 hours (effective value) at Po=60W, Tc=25 degrees C, reverse voltage of 2V, operating temperature of -10 to +30 degrees C, storage temperature of -10 to +60 degrees C, threshold current of 10A, operating current of 75A, wavelength spectrum width of 3nm and differential efficiency of 1.5W/A, and a high efficiency water cooling package.
The SLD432S 40W 808nm wavelength array laser diode has an operating lifetime of MTTF 10,000 hours (effective value) at Po=40W, Tc=25 degrees C, (Tc:Thermistor hole temperature), reverse voltage of 2V, operating temperature of -10 to +30 degrees C, storage temperature of -40 to +85 degrees C, threshold current of 14A, operating current of 50A, wavelength spectrum width of 2.5nm and differential efficiency of 1.1W/A.
The SLD431S 20W 808nm wavelength array laser diode has an operating lifetime of MTTF 10,000 hours (effective value) at Po=20W, Tc=25 degrees C, (Tc:Thermistor hole temperature), reverse voltage of 2V, operating temperature of -10 to +30 degrees C, storage temperature of -40 to +85 degrees C, threshold current of 6A, operating current of 25A, wavelength spectrum width of 3nm (max) and differential efficiency of 1.0W/A.
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